digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n6504 series silicon controlled rectifiers reverse blocking thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings t j = 25c unless otherwise noted rating symbol value unit peak repetitive off state voltage (1) (gate open, sine wave 50 to 60 hz, t j = 25 to 125c) 2n6504 2n6505 2N6507 2n6508 2n6509 v drm , v rrm 50 100 400 600 800 v on-state current rms (180 conduction angles; t c = 85c) i t(rms) 25 a average on-state current (180 conduction angles; t c = 85c) i t(av) 16 a peak non-repetitive surge current (1/2 cycle, sine wave 60 hz, t j = 100c i tsm 250 a forward peak gate power (pulse width 1.0 s, t c = 85c) p gm 20 w forward average gate power (t = 8.3ms, t c = 85c) p g(av) `0.5 w forward peak gate current (pulse width 1.0 s, t c = 85c) i gm 2.0 a operating junction temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if thes e limits are exceeded, device functional operation is not impli ed, damage may occur and reliability may be affected. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate v oltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current sour ce such that the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol max unit thermal resistance, junction-to-case r jc 1.5 c/w maximum lead temperature for soldering purposes 1/8? in from case for 10 seconds t l 260 c electrical characteristics characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25c t j = 125c i drm , i rrm - - - - 10 2.0 a ma on characteristics forward on-state voltage (2) (i tm = 50a) v tm - - 1.8 v gate trigger current (continuous dc) (v ak = 12vdc, r l = 100 ) t c = 25c t c = -40c i gt - - 9.0 - 30 75 ma gate trigger voltage (continuous dc) (v ak = 12 vdc, r l = 100 , t c = -40c) v gt - 1.0 1.5 v gate non-trigger voltage (v ak = 12vdc, r l = 100 , t j = 125c) v gd 0.2 - - v holding current (v ak = 12vdc, initiating current = 200ma, gate open) t c = 25c t c = -40c i h - - 18 - 40 80 ma turn-on time (i tm = 25a, i gt = 50madc) t gt - 1.5 2.0 s turn-off time (v drm = rated voltage) (i tm = 25a, i r = 25a) (i tm = 25a, i r = 25a, t j = 125c) t q - - 15 35 - - s dynamic characteristics critical rate of rise of off state voltage (gate open, rated v drm , exponential waveform) dv/dt - 50 - v/s 2. pulse test: pulse width 300s, duty cycle 2%. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n6504 series silicon controlled rectifiers reverse blocking thyristors mechanical characteristics case to-220ab marking alpha-numeric pin out see below to-220ab inches millimeters min max min max a 0.575 0.620 14.600 15.750 b 0.380 0.405 9.650 10.290 c 0.160 0.190 4.060 4.820 d 0.025 0.035 0.640 0.890 f 0.142 0.147 3.610 3.730 g 0.095 0.105 2.410 2.670 h 0.110 0.155 2.790 3.930 j 0.014 0.022 0.360 0.560 k 0.500 0.562 12.700 14.270 l 0.045 0.055 1.140 1.390 n 0.190 0.210 4.830 5.330 q 0.100 0.120 2.540 3.040 r 0.080 0.110 2.040 2.790 s 0.045 0.055 1.140 1.390 t 0.235 0.255 5.970 6.480 u - 0.050 - 1.270 v 0.045 - 1.140 - z - 0.080 - 2.030 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n6504 series silicon controlled rectifiers reverse blocking thyristors symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current average current derating maximum on-state power dissipation typical on-state characteristics maximum non-repetitive surge current sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n6504 series silicon controlled rectifiers reverse blocking thyristors thermal response typical gate trigger current vs. junction temperature typical gate trigger voltage vs. junction temperature typical holding current vs . junction temperature sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
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